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DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS * Converters * Inverters * Switching regulators * Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter 1 2 3 MBK117 BUW12W; BUW12AW 2 1 MBB008 3 Fig.1 Simplified outline (SOT429) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW12W BUW12AW VCEO collector-emitter voltage BUW12W BUW12AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb 25 C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 8 20 125 0.8 V V V A A W s PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W 1997 Aug 14 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW12W BUW12AW VCEO collector-emitter voltage BUW12W BUW12AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature tp 2 ms Tmb 25 C; see Fig.3 see Figs 2 and 4 tp < 2 ms; see Fig.2 open base VBE = 0 CONDITIONS BUW12W; BUW12AW MIN. - - - - - - - - - -65 - MAX. 850 1000 400 450 8 20 4 6 125 +150 150 V V V V A A A A W UNIT C C CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS MIN. 400 450 IC = 6 A; IB = 1.2 A; see Figs 7 and 9 IC = 5 A; IB = 1 A; see Figs 7 and 9 IC = 6 A; IB = 1.2 A; see Fig.7 IC = 5 A; IB = 1 A; see Fig.7 VCE = VCESMmax; VBE = 0; note 1 VCE = VCESMmax; VBE = 0; Tj = 125 C; note 1 IEBO hFE emitter-base cut-off current DC current gain VEB = 9 V; IC = 0 VCE = 5 V; IC = 10 mA; see Fig.10 VCE = 5 V; IC = 1 A; see Fig.10 - - - - - - TYP. MAX. - - 1.5 1.5 UNIT V V V V collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUW12W BUW12AW collector-emitter saturation voltage BUW12W BUW12AW VCEsat VBEsat base-emitter saturation voltage BUW12W BUW12AW - - - - - 10 10 - - - - - 18 20 1.5 1.5 1 3 10 35 35 V V mA mA mA ICES collector-emitter cut-off current 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Switching times resistive load (see Figs 11 and 12) ton turn-on time BUW12W BUW12AW ts storage time BUW12W BUW12AW tf fall time BUW12W BUW12AW ICon = 6 A; IBon = -IBoff = 1.2 A ICon = 5 A; IBon = -IBoff = 1 A - - - - 0.8 0.8 s s ICon = 6 A; IBon = -IBoff = 1.2 A ICon = 5 A; IBon = -IBoff = 1 A - - - - 4 4 s s ICon = 6 A; IBon = -IBoff = 1.2 A ICon = 5 A; IBon = -IBoff = 1 A - - - - 1 1 s s Switching times inductive load (see Figs 13 and 14) ts storage time BUW12W ICon = 6 A; IB = 1.2 A ICon = 6 A; IB = 1.2 A; Tj = 100 C BUW12AW tf fall time BUW12W ICon = 6 A; IB = 1.2 A ICon = 6 A; IB = 1.2 A; Tj = 100 C BUW12AW ICon = 5 A; IB = 1 A ICon = 5 A; IB = 1 A; Tj = 100 C Note 1. Measured with a half-sinewave voltage (curve tracer). - - - - 80 140 80 140 150 300 150 300 ns ns ns ns ICon = 5 A; IB = 1 A ICon = 5 A; IB = 1 A; Tj = 100 C - - - - 1.6 1.8 1.6 1.8 2.1 2.3 2.1 2.3 s s s s 1997 Aug 14 3 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW handbook, full pagewidth 103 IC (A) MGB927 102 ICM max IC max (1) II 10 1 10-1 I (2) III DC 10-2 BUW12W BUW12AW 10-3 1 10 102 IV 103 104 VCE (V) Tmb 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE 100 and tp 0.6 s. IV - Repetitive pulse operation in this region is permissible provided VBE 0 and tp 2 ms. (1) Ptot max line. (2) Second breakdown limits. Fig.2 Forward bias SOAR. 1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW MGD283 120 handbook, halfpage Ptot max (%) 80 handbook, halfpage 10 MGL174 IC (A) 5 40 BUW12W BUW12AW 0 0 50 100 Tmb (oC) 150 0 0 400 800 VCE (V) 1200 Fig.3 Power derating curve. Fig.4 Reverse bias SOAR. andbook, halfpage + 50 V 100 to 200 L I halfpage handbook,C (mA) 250 200 MGE239 horizontal oscilloscope 100 vertical 300 1 MGE252 6V 30 to 60 Hz 0 VCE (V) min VCEOsust Fig.5 Test circuit for collector-emitter sustaining voltage. Fig.6 Oscilloscope display for collector-emitter sustaining voltage. 1997 Aug 14 5 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW MGB914 handbook, full pagewidth 2.0 VBEsat VCEsat (V) 1.5 1.0 (1) (2) 0.5 (3) (4) 0 10-1 IC/IB = 5. (1) VBE; Tj = 25 C. (2) VBE; Tj = 100 C. 1 (3) VCE; Tj = 100 C. (4) VCE; Tj = 25 C. 10 IC (A) 102 Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values. handbook, full pagewidth 1.6 MGB911 VBE (V) 1.4 (1) 1.2 (2) (3) 1.0 0.8 0 Tj = 25 C. (1) IC = 8 A. 0.5 (2) IC = 6 A. (3) IC = 3 A. 1 1.5 2 2.5 IB (A) 3 Fig.8 Base-emitter voltage as a function of base current; typical values. 1997 Aug 14 6 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW handbook, halfpage 10 MGB872 102 handbook, halfpage MBC096 (1) VCEsat (V) (2) (3) hFE VCE = 5 V 1V 1 10 10-1 10-2 10-1 1 IB (A) 10 1 10-2 10-1 1 10 2 IC (A) 10 (1) IC = 3 A. (2) IC = 6 A. (3) IC = 8 A. Tj = 25 C; solid line: typical values; dotted line: maximum values. Fig.9 Collector-emitter saturation voltage as a function of base current. Fig.10 DC current gain; typical values. handbook, halfpage tr -IB on MBB730 90% -IB handbook, halfpage VCC 10% t -IB off -IC on RL VIM 0 tp T MGE244 RB D.U.T. 90% -IC 10% ton VCC = 250 V; tp = 20 s; VIM = -6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. tf t ts toff Fig.11 Test circuit resistive load. Fig.12 Switching time waveforms with resistive load. 1997 Aug 14 7 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW handbook, halfpage tr IB on 90% IB 10% handbook, halfpage VCC LC t -IB off VCL D.U.T. 90% IC on +IB -VBE LB MGE246 IC 10% tf t ts toff VCL = 300 V; VCC = 30 V; VBE = -5 V; LB = 1 H; LC = 200 H. MGE238 Fig.13 Test circuit inductive load. Fig.14 Switching time waveforms with inductive load. 1997 Aug 14 8 Philips Semiconductors Product specification Silicon diffused power transistors PACKAGE OUTLINE BUW12W; BUW12AW Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 E P A A1 q S R D Y L1(1) Q b2 L 1 2 b b1 e e 3 wM c 0 10 scale 20 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.3 4.7 A1 1.9 1.7 b 1.2 0.9 b1 2.2 1.8 b2 3.2 2.8 c 0.9 0.6 D 21 20 E 16 15 e 5.45 L 16 15 L1 4.0 3.6 P 3.7 3.3 Q 2.6 2.4 q 5.3 R 3.5 3.3 S 7.5 7.1 w 0.4 Y 15.7 15.3 6 4 17 13 Note 1. Terminals are uncontrolled within zone L1. OUTLINE VERSION SOT429 REFERENCES IEC JEDEC TO-247 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 1997 Aug 14 9 Philips Semiconductors Product specification Silicon diffused power transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BUW12W; BUW12AW This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 14 10 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02726 |
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